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| PD - 94282A IRF1902 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) max (m) ) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Description S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.2 3.4 17 2.5 1.6 0.02 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 50 Units C/W www.irf.com 1 11/15/01 IRF1902 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.70 5.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 5.0 1.2 1.8 5.9 13 23 19 310 130 55 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 85 VGS = 4.5V, ID = 4.0A m 170 VGS = 2.7V, ID = 3.2A --- V VDS = V GS, ID = 250A --- S VDS = 10V, ID = 4.0A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 7.5 ID = 4.2A --- nC VDS = 10V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 38 42 4.2 A 17 1.2 57 63 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, I F = 2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF1902 100 VGS 7.0V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V TOP 100 ID , Drain-to-Source Current (A) 10 ID , Drain-to-Source Current (A) 10 VGS 7.0V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.25V TOP 2.25V 1 2.25V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.0 I D = 4.2A ID , Drain-to-Source Current ( ) 1.5 10.00 T J = 175C (Normalized) T J = 25C RDS(on) , Drain-to-Source On Resistance 1.0 0.5 1.00 2.0 2.5 3.0 VDS = 15V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 0.0 -60 -40 -20 0 20 40 60 80 V GS = 4.5V 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1902 10000 6 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + C ds gd ID = 4.0A 5 VDS = 16V VDS = 10V C, Capacitance(pF) VGS, Gate-to-Source Voltage (V) 1000 4 Ciss Coss 100 2 Crss 1 10 1 10 100 0 0 1 2 4 5 6 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.00 100 OPERATION IN THIS AREA LIMITED BY R DS (on) 10.00 T J = 150C T J = 25C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 100 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 VSD , Source-toDrain Voltage (V) 0.1 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1902 5.0 VDS 4.0 RD VGS RG D.U.T. + ID , Drain Current (A) 3.0 - VDD VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 0.0 25 50 75 100 125 150 90% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 (Z thJA) D = 0.50 10 0.20 0.10 Thermal Response 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 Notes: 1. Duty factor D = 2. Peak T 0.1 t1/ t 2 J = P DM x Z thJA P DM t1 t2 +T A 1 10 t 1, Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF1902 RDS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 2.0 4.0 6.0 8.0 3.000 2.500 2.000 VGS = 2.7V 1.500 ID = 4.2A 1.000 0.500 VGS = 4.5V 0.000 0 5 10 15 20 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com IRF1902 2.0 50 VGS(th) Gate threshold Voltage (V) 40 1.5 Power (W) 100 125 150 ID = 250A 30 20 1.0 10 0.5 -75 -50 -25 0 25 50 75 0 1.00 10.00 100.00 1000.00 T J , Temperature ( C ) Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF1902 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] F OOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER www.irf.com INTERNAT IONAL RECTIFIER LOGO 8 YWW XXXX F7101 IRF1902 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01 www.irf.com 9 |
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